SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device for improving withstand voltage property between a resistance element and a semiconductor substrate. SOLUTION: This semiconductor substrate is provided with: a first element isolation film 2a formed in a semiconductor substrate 1 by a LOCOS oxidization method for isolating a first element region 1a from the other region; a second element isolation film 2b embedded in a groove formed in the semiconductor substrate 1 for isolating the second element region 1b from the other region; a first semiconductor element formed in the first element region 1a; a second semiconductor element formed in the second element region 1b; and a resistance element 4d formed on the first element isolation film 2a. COPYRIGHT: (C)2008,JPO&INPIT