| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the characteristics of the capacitor dielectric film in a ferroelectric capacitor can be enhanced, and to provide its fabrication method. SOLUTION: The method for fabricating a semiconductor device comprises a step for forming a first ferroelectric film 24b on a first conductive film 23 by a film deposition method including at least a film deposition step by sol-gel method, a step for forming a second ferroelectric film 24c on the first ferroelectric film 24b by sputtering, a step for forming a second conductive film 25 on the second ferroelectric film 24c, and a step for forming a capacitor Q having a lower electrode 23a, a capacitor dielectric film 24a and an upper electrode 25a by patterning the first conductive film 23, the first and second ferroelectric films 24b and 24c, and a second conductive film 25. COPYRIGHT: (C)2008,JPO&INPIT
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