| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be easily manufactured, while being able to suppress a surge voltage at the time of turnoff. SOLUTION: The semiconductor device includes: a drift region 20 (third semiconductor region) of an n-type (first conductivity-type); a body region 50 (second semiconductor region) of a p-type (second conductivity-type) provided at an upper portion of the drift region 20; an emitter region 60 (first semiconductor region) of an n-type separated from the drift region 20 by the body region 50, while being formed to be faced to a front surface of the body region 50; a trench 14 which is formed to penetrate the body region 50 from a front surface of the emitter region 60 and to project in the drift region 20; a trench gate electrode 13 filled in the trench 14; and a semiconductor region 70 (fourth semiconductor region) of a p-type which is formed at a position touching a side surface of the trench 14 projecting against the drift region 20. COPYRIGHT: (C)2008,JPO&INPIT
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