| 摘要 |
PROBLEM TO BE SOLVED: To achieve high-speed operation of MISFET by reducing a bonding capacitance without lowering an ON-current of MISFET. SOLUTION: The source/drain regions 16, 17 of MISFET are respectively formed of a selectively grown silicon layer 22 and a plurality of divided diffusion layer regions 21a that are connected integrally with the selectively grown silicon layer 22. The divided diffusion layer regions 21a are mutually isolated with a diffusing layer dividing region 23 formed with the STI method. COPYRIGHT: (C)2008,JPO&INPIT
|
