METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the deviation between an actual resistance value and a design value in a resistance layer for improving the in-plane uniformity of the resistance value in each resistance layer in a method of manufacturing a semiconductor device having the resistance layer. SOLUTION: A gate electrode 4 and a polysilicon resistance layer 5 are formed in a prescribed region on a semiconductor substrate 1. A source layer 7 having low concentration and a drain layer 8 are formed. An insulating film 9 (for example, a silicon nitride film) is formed on the entire surface of the semiconductor substrate 1. A mask layer 10 is formed selectively in a region superposed on the polysilicon resistance layer 5 on the insulating film 9. The mask layer 10 is used for etching back the insulating film 9 as shown in Fig. 4. The mask layer 10 becomes a barrier in etchback, thus suppressing the excessive grinding of the substrate insulating film 9, and hence suppressing the grinding of the surface of the polysilicon resistance layer 5. COPYRIGHT: (C)2008,JPO&INPIT