发明名称 PHOTOMASK FOR NEGATIVE EXPOSURE AND PHOTOCURING TYPE PATTERN PRODUCED USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask for negative exposure which permits production of a photocuring type pattern without peeling the pattern, and a photocuring type pattern produced using the same. <P>SOLUTION: The photomask 21 for negative exposure includes an objective pattern 24 and a dummy pattern 25, wherein the objective pattern 24 comprises openings 22 and light shielding portions 23, and the dummy pattern 25 is disposed in such a way that it comes in contact with at least one side of the objective pattern 24. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008122897(A) 申请公布日期 2008.05.29
申请号 JP20070013934 申请日期 2007.01.24
申请人 HITACHI CHEM CO LTD 发明人 SHIBATA TOMOAKI;TAKAHASHI ATSUSHI;YAMAGUCHI MASATOSHI;TAKASAKI TOSHIHIKO;MAKINO TATSUYA;OCHIAI MASAMI
分类号 G03F1/00;G03F1/70;G03F7/004;G03F7/20 主分类号 G03F1/00
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