发明名称 PROCESS FOR REVEALING CRYSTALLINE DEFECTS AND/OR STRESS FIELDS AT MOLECULAR ADHESION INTERFACE OF TWO SOLID MATERIALS
摘要 PROBLEM TO BE SOLVED: To use a lattice in the order of nanometer or micrometer including stress fields and/or lattice defects; and thereby to make it possible to use the same. SOLUTION: A process capable of revealing defects or stresses in a structure comprising: securing a face of a first element to a face of a second element by molecular adhesion so that the faces have offset with respect to a crystalline lattice and thereby forming a lattice including crystalline defects and/or stress fields in a crystalline zone next to the fixed interface; forming a thin film along the securing interface by reducing the thickness of one of the elements, the thickness of the thin film being prevented from causing the free surface of the thin film to reveal the crystalline defective lattices and/or stress fields, and the thickness of the thin film enabling subsequent steps; and processing the thin film so that the crystalline defective lattices and/or stress fields are revealed on the free surface of the thin film. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008124480(A) 申请公布日期 2008.05.29
申请号 JP20070302263 申请日期 2007.11.21
申请人 COMMISS ENERG ATOM 发明人 FOURNEL FRANK;MORICEAU HUBERT;MAGNEA NOEL
分类号 B82B3/00;H01L21/02;H01L21/18;H01L21/22;H01L21/265;H01L21/306;H01L21/324;H01L27/12 主分类号 B82B3/00
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