| 摘要 |
PROBLEM TO BE SOLVED: To obtain stable resist removing, in which dropping of the speed for removing a resist on a metal film containing TiN is suppressed and no residual resist occurs. SOLUTION: The manufacturing method of a semiconductor device includes a process (a) in which a metal film 12 containing titanium nitride is formed on a substrate 10, a process (b) in which an oxide film 13 is formed on the metal film 12, a process (c) in which a resist pattern 14 is formed on the oxide film 13, a process (d) in which the metal film 13 is selectively etched with the resist pattern 14 as a mask, and a process (e) in which the resist pattern 14 is removed in oxygen plasma after the process (d). COPYRIGHT: (C)2008,JPO&INPIT
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