GaN LAYER GROWING METHOD AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a GaN layer growing method capable of realizing a GaN growing rate applicable to manufacture of a semiconductor element, and to provide a semiconductor having a GaN layer growing just above an Si substrate. SOLUTION: In the GaN layer growing method using a CVD method to grow a GaN layer just above the Si substrate, the GaN layer is grown in≤100 Torr growing pressure. This invention realizes a GaN layer growing method capable of realizing a GaN layer growing rate applicable to manufacture of a semiconductor element, and provides the semiconductor element having the growing GaN layer just above the Si substrate. COPYRIGHT: (C)2008,JPO&INPIT