发明名称 |
POLISHING COMPOSITION AND POLISHING PROCESS |
摘要 |
To provide a polishing composition which is suitable particularly for an application to polish a wafer containing tungsten, and a polishing process employing such a polishing composition. The polishing composition of the present invention comprises a colloidal silica and hydrogen peroxide. The pH of the polishing composition is from 1 to 4, and the concentration of iron ions in the polishing composition is at most 0.02 ppm. The polishing composition preferably further contains phosphoric acid or a phosphate.
|
申请公布号 |
US2008120918(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20070945004 |
申请日期 |
2007.11.26 |
申请人 |
FUJIMI INCORPORATED |
发明人 |
HATTORI MASAYUKI;SATOH HIDEYUKI;KAWAMURA ATSUNORI |
分类号 |
C09K3/14;B24B37/00;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|