SEMICONDUCTOR METHODS

摘要

A method includes the steps of: (a) forming a conductive layer within a dielectric layer formed over a substrate; (b) forming a material layer over the conductive layer and the dielectric layer; (c) forming an opening within the material layer by an etch process to expose a portion of the dielectric layer and a top surface of the conductive layer; (d) forming a first metal-containing layer within the opening substantially covering sidewalls of the material layer and the exposed portion of the second dielectric layer; and (e) removing the material layer by an oxygen-containing plasma process to expose a portion of outer sidewalls of the first metal-containing layer.