METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride semiconductor substrate where a ground substrate can be peeled without taking a labor hour and to provide the group III nitride semiconductor substrate produced by the method.

SOLUTION: A method for producing a self-supported substrate comprises (i) a step to form an aluminum carbide layer 11 on the ground substrate 10, (ii) a step to nitride the aluminum carbide layer 11, (iii) a step to epitaxially grow a group III nitride semiconductor layer on a nitrided aluminum carbide layer 12 and (iv) a step to remove the ground substrate 10 from the group III nitride semiconductor layer and then prepare the group III nitride semiconductor substrate including the group III nitride semiconductor layer.

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