| 摘要 |
<P>PROBLEM TO BE SOLVED: To stabilize quality of a photodiode when silicide layers are formed on a P-type high concentration diffusion layer and an N-type high concentration diffusion layer of the photodiode. <P>SOLUTION: The photodiode 1 is provided with a silicone semiconductor layer having an insulating layer formed on a support substrate, an element forming region formed on the insulating layer and an element separating region surrounding the element forming region, an element separating layer 9 formed in the element separating region, the P-type high concentration diffusion layer 12 formed in the element forming region, the N-type high concentration diffusion layer 14 formed in the element forming region adjacent to the element separating layer 9, a low concentration diffusion layer 15 of P or N type in the element forming region positioned between the P-type high concentration diffusion layer 12 and the N-type high concentration diffusion layer 14 and the silicide layers 17 formed by detaching them from a boundary 16 between the low concentration diffusion layer 15 and the P-type high concentration diffusion layer 12 and a boundary 16 between the low concentration diffusion layer 15 and the N-type high concentration diffusion layer 14 at upper parts of the P-type high concentration diffusion layer 12 and the N-type high concentration diffusion layer 14. <P>COPYRIGHT: (C)2008,JPO&INPIT |
