| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device having excellent electric characteristics, and to provide a manufacturing method thereof. <P>SOLUTION: The thin-film semiconductor device 10 is provided with a substrate 11, a first insulating layer (undercoat layer) 12, a first conductive layer 13, a second insulating layer 14, a semiconductor layer 15, a channel region 16, a source region 17, a drain region 18, a gate insulating film 19, an interlayer insulating film 20, a gate electrode 21, a source electrode 22, a drain electrode 23, and a bias electrode 24. A bias voltage is applied to an interface of a substrate side of the semiconductor layer 15 by the bias electrode 24 and the first conductive layer 13. Thus, instability such as reduction in an off-current or a threshold voltage can be suppressed and the thin-film semiconductor device 10 can have excellent electric characteristics. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
