MAGNETORESISTIVE MEMORY, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an MRAM using magnetic tunnel elements capable of manufacturing an insulating film with few defects by supplying to the film a sufficient oxygen by ozone during forming an oxide film obtained by oxidizing metal aluminum in a mixed gas containing oxygen and ozone, without giving damage to the obtained oxide film. SOLUTION: In a magnetic tunnel element 8 having a hard magnetic film 5 and a soft magnetic film 7 having mutually different coercive forces and an insulating film 6 interposed between them, the insulating film 6 is formed by oxidizing an Al film in the mixed gas of oxygen and ozone. COPYRIGHT: (C)2008,JPO&INPIT