| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to effectively suppress a contamination of a high melting point metal in the case of a silicide formation, and to intend to raise a productivity of an advanced image sensor and to improve a yield. SOLUTION: On a Si substrate 100 in which a photodiode 101 is formed, there is formed a polysilicon gate electrode 103 through a gate insulating film 102. On the polysilicon gate electrode 103 there are laminated insulating films 111, 112, 113 of three layers for forming a side wall. The insulating film 111 of a first layer consists of, for example, a SiO<SB>2</SB>film. The insulating film 112 of a second layer consists of, for example, a SiN film. Moreover, the insulating film 113 of a third layer consists of, for example, the SiO<SB>2</SB>film and is used as a spacer of the side wall. At the photodiode 101 side, an etch back of the insulating film 113 of the third layer isn't carried out, but the insulating film 113 of the third layer remains on the insulating film 112 of the second layer and is constituted as a protective film of a high melting metal film block film. COPYRIGHT: (C)2008,JPO&INPIT
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