发明名称 |
Conductive Wiring for Semiconductor Devices |
摘要 |
A conductive wiring for a semiconductor device is provided including a semiconductor substrate and a plurality of lower conductive structures on the semiconductor substrate. An insulating layer is provided that electrically insulates the plurality of lower conductive structures from one another. A first insulation interlayer pattern is provided on the insulation layer. The first insulation interlayer pattern includes a contact plug that contacts the substrate through the insulation layer. An etch-stop layer is provided on the contact plug and the first insulation interlayer pattern. A second insulation interlayer pattern is provided on the etch-stop layer. The second insulation interlayer pattern includes a conductive line that is electrically connected to the contact plug. Related methods and flash memory devices are also provided.
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申请公布号 |
US2008122076(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20070943166 |
申请日期 |
2007.11.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG JONG-WON;CHOI GIL-HEYUN;LEE JONG-MYEONG;PARK HYUN;CHOI KYUNG-IN;LEE HYUN-BAE |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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