发明名称 Conductive Wiring for Semiconductor Devices
摘要 A conductive wiring for a semiconductor device is provided including a semiconductor substrate and a plurality of lower conductive structures on the semiconductor substrate. An insulating layer is provided that electrically insulates the plurality of lower conductive structures from one another. A first insulation interlayer pattern is provided on the insulation layer. The first insulation interlayer pattern includes a contact plug that contacts the substrate through the insulation layer. An etch-stop layer is provided on the contact plug and the first insulation interlayer pattern. A second insulation interlayer pattern is provided on the etch-stop layer. The second insulation interlayer pattern includes a conductive line that is electrically connected to the contact plug. Related methods and flash memory devices are also provided.
申请公布号 US2008122076(A1) 申请公布日期 2008.05.29
申请号 US20070943166 申请日期 2007.11.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG JONG-WON;CHOI GIL-HEYUN;LEE JONG-MYEONG;PARK HYUN;CHOI KYUNG-IN;LEE HYUN-BAE
分类号 H01L23/48 主分类号 H01L23/48
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