发明名称 Trench Memory
摘要 A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially doped collar can be done by deposition of a doped insulator in the trench, removal of a portion of the doped deposition, deposition of an undoped insulator in the trench and removal of a portion of the doped and undoped insulators.
申请公布号 US2008124863(A1) 申请公布日期 2008.05.29
申请号 US20080023175 申请日期 2008.01.31
申请人 CHENG KANGGUO;WANG GENG 发明人 CHENG KANGGUO;WANG GENG
分类号 H01L21/8242 主分类号 H01L21/8242
代理机构 代理人
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