FLASH MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A flash memory device is disclosed. The flash memory device includes a substrate, a memory cell transistor and a selection transistor. The substrate has a first region where the memory cell transistor is to be formed and a second region where the selection transistor is to be formed. The first region has an upper surface located within a first plane and the second region has an upper surface located within a second plane different from the first plane. The memory cell transistors may have a Fin-FET structure. The flash memory device may prevent a disturbance phenomenon in which an electron-hole pair infiltrates the memory cell transistor caused by a high integration degree of the flash memory device.