| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride phosphor and an oxynitride phosphor, efficiently and stably emitting a light, by 430-480 nm light from a semiconductor light emitting element, and to provide a light emitting device using the phosphor, efficient and having stable characteristics. <P>SOLUTION: A bivalent europium-activated oxynitride phosphor practically represented by general formula (A), Eu<SB>a</SB>Si<SB>b</SB>Al<SB>c</SB>O<SB>d</SB>N<SB>e</SB>, and having ≤20 ppm Fe content and ≤10 ppm Mn content; a bivalent europium-activated oxynitride phosphor practically represented by general formula (B), MI<SB>f</SB>Eu<SB>g</SB>Si<SB>h</SB>Al<SB>k</SB>O<SB>m</SB>N<SB>n</SB>, and having ≤20 ppm Fe content and ≤10 ppm Mn content; and a bivalent europium-activated nitride phosphor practically represented by general formula (C), (MII<SB>1-p</SB>Eu<SB>p</SB>)MIIISiN<SB>3</SB>, and having ≤10 ppm Fe content and ≤5 ppm Mn content, and a light emitting device using the phosphor are provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
