ASYMMETRIC MULTI GATE TRANSISTOR, AND METHOD OF FORMATION

摘要

PROBLEM TO BE SOLVED: To provide an asymmetric multi gate transistor and its forming method. SOLUTION: The asymmetric multi gate transistor comprises a semiconductor fin having uneven doping profile in one embodiment. A first portion of the fin has a richer doping concentration, while a second portion of the fin has a thinner doping concentration. In another embodiment, such asymmetric multi gate transistor as comprises a gate dielectrics which is formed on the semiconductor fin and has a different thickness is disclosed. The asymmetric multi gate transistor comprises a thin gate dielectrics formed on the first side surface of the semiconductor fin and a thick gate dielectrics formed on the second side surface of the fin. COPYRIGHT: (C)2008,JPO&INPIT