| 摘要 |
PROBLEM TO BE SOLVED: To produce a silicon carbide single crystal having low concentration of nitrogen contained therein and having high resistivity. SOLUTION: This process for producing the silicon carbide single crystal comprises supplying argon gas, purified by an argon gas purifier 9, into a heating furnace 7, and heating a crucible 3 under an argon gas atmosphere to sublimate a raw material 2 for silicon carbide and thus to grow a silicon carbide single crystal on the surface of a seed crystal 4. COPYRIGHT: (C)2008,JPO&INPIT
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