发明名称 |
METHODS FOR ENHANCING TRENCH CAPACITANCE AND TRENCH CAPACITOR |
摘要 |
Methods for enhancing trench capacitance and a trench capacitor so formed are disclosed. In one embodiment a method includes forming a first portion of a trench; depositing a dielectric layer in the first portion; performing a reactive ion etching including a first stage to etch the dielectric layer and form a micro-mask on a bottom surface of the first portion of the trench and a second stage to form a second portion of the trench having a rough sidewall; depositing a node dielectric; and filling the trench with a conductor. The rough sidewall enhances trench capacitance without increasing processing complexity or cost.
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申请公布号 |
US2008122030(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20060468472 |
申请日期 |
2006.08.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DOBUZINSKY DAVID M.;LI XI |
分类号 |
H01L29/86;H01L21/441 |
主分类号 |
H01L29/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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