发明名称 Semiconductor devices and methods of manufacture thereof
摘要 Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the barrier layer.
申请公布号 US2008121963(A1) 申请公布日期 2008.05.29
申请号 US20060606812 申请日期 2006.11.29
申请人 GOVINDARAJAN SHRINIVAS 发明人 GOVINDARAJAN SHRINIVAS
分类号 H01L27/108;H01L21/322;H01L21/469 主分类号 H01L27/108
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