Ion Implantation Device and a Method of Semiconductor Manufacturing by the Implantation of Molecular Ions Containing Phosphorus and Arsenic

摘要

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx⁺, or AnRHx⁺, where n and x are integers with 4<=n, and x>=0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process. The use of such phosphorus or arsenic-containing clusters will provide a dramatic increase in wafer throughput, improved device performance, reduced cost per wafer, simplification in transistor formation, improved device yields through the reduction of wafer charging, and other benefits. Thus, this technology significantly reduces manufacturing costs relative to prior implantation techniques.