| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor-on-insulator (SOI) type transistor, a memory, another DRAM circuit, another DRAM array, a transistor gate array, and such a structure on the same substrate. SOLUTION: The semiconductor-on-insulator type transistor is provided with (a) an insulating layer, (b) a semiconductor material layer on the insulating layer, (c) a transistor gate provided at the lower-face part of the semiconductor material layer, and (d) source/drain diffusion region at the vertical upper-face part and source/drain diffusion region at a vertical lower-face part, provided respectively in the semiconductor material layer, while being operatively set close to the transistor gate. The DRAM circuit has a plurality of memory cells that do not require sequential access, and at least a part of a plurality of the memory cells has more than two memory cells with respect to a single bit-line contact. COPYRIGHT: (C)2008,JPO&INPIT
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