| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate of a structure in which a connection part with the other substrate can be increased and a degree of freedom in a design can be enhanced, and its manufacturing method. SOLUTION: A semiconductor device 10 comprises: a semiconductor substrate 11 having a surface electrode 12 on one face 11a; a first insulating resin layer 13a formed on the one face 11a of the substrate 11 and having an opening 14a at a location matching the surface electrode 12; a first conductive layer 15a arranged on the insulating resin layer 13a and connected electrically with the surface electrode 12 through the opening 14a; a through electrode 20 connected electrically with the first conductive layer 15a through a through hole 21 penetrating the first insulating resin layer 13a and the semiconductor substrate 11; a second insulating resin layer 13b formed on the other face 11b of the semiconductor substrate and having an opening 14b at a location matching the through electrode 20; and a second conductive layer 15b arranged on the insulating resin layer 13b and connected electrically with the through electrode 20 through the opening 14b. COPYRIGHT: (C)2008,JPO&INPIT
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