| 摘要 |
PROBLEM TO BE SOLVED: To improve the thermal stability and durability of a channel layer of an organic FET and to ensure efficient charge transfer. SOLUTION: The semiconductor device 1 has such a structure that a gate electrode 11 and a channel layer 13 are formed via a gate insulation film 12 and electrodes (a source electrode 14 and a drain electrode 15) are formed on both sides of the channel layer 13. The channel layer 13 has a constituent group which consists of a conjugated polymer complex obtained from a complexation reaction between a ligand having aπ-conjugate connecting substituent groups capable of forming a coordinate bond with metal ions or a ligand having aσ-conjugate and the metal ions and which forms a chemical bond with the electrodes at the terminal of the channel layer 13. COPYRIGHT: (C)2008,JPO&INPIT
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