| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device having proper frequency temperature characteristics, a large electro-mechanical coupling coefficient, and small propagation loss. SOLUTION: A surface acoustic wave device 1 comprises a piezoelectric substrate 2 made with 17°-58°rotated Y plate X propagation LiTaO<SB>3</SB>, an IDT 3 composed of tantalum, and a SiO<SB>2</SB>film formed on the piezoelectric substrate 2 to cover IDT 3. The standard film thickness H/λof the IDT 3 is within the range of 0.004-0.055, and the standard film thickness Hs/λof the SiO<SB>2</SB>film is within the range of 0.10-0.40, where H is the film thickness andλis the wavelength of surface waves. COPYRIGHT: (C)2008,JPO&INPIT
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