SEMICONDUCTOR LASER, METHOD OF MANUFACTURING SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser wherein an electrode can be effectively prevented from being peeled off during cleavage for forming the end face of a resonator in case when alloying process is not conducted after the electrode is formed on a nitride-based III-V group compound semiconductor layer. SOLUTION: The semiconductor laser is provided with an electrode 13 that is formed on the boundary of a nitride-based III-V group compound semiconductor layer 9 constituting a laser structure without being alloyed. In this case, at least a part of the electrode 13 is a metal laminated film containing metal films with n layers (n; integer of two or more), wherein the total thickness of the metal laminated film is 300 nm or more and, when assuming that rigidity and thickness of i-th metal film from the bottom of the metal laminated film are Giand ti, respectively, and the equivalent average rigidity Geof the metal laminated film is defined as [total sum of (Gi×ti)]/total film thickness, Ge≤55 GPa is established. COPYRIGHT: (C)2008,JPO&INPIT