发明名称 |
NONVOLATILE STORAGE DEVICE, AND ITS OPERATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device using a variable resistor for a storage component, and to provide its operation method. SOLUTION: This storage device includes a first electrode 12 and a second electrode 14, and a variable resistor 16 interposed between the first electrode 12 and the second electrode 14. The variable resistor 16 is characterized in that it has a critical voltage and its resistance-voltage characteristic is switched at a voltage of the critical voltage or above, thereby a resistance value for a read-out voltage after the switching becomes larger than that before the switching. The operation method of the storage device includes a procedure that two or more write-in voltages higher than the initial critical voltage are set and the write-in voltages provide data values to the storage device by switching it respectively. A read-out voltage lower than the initial critical voltage is set, and the data value is discriminated by measuring a current flowing through the variable resistor 16 with the read-out voltage. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008124471(A) |
申请公布日期 |
2008.05.29 |
申请号 |
JP20070291089 |
申请日期 |
2007.11.08 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE JANG-EUN;OH SE-CHUNG;NAM KYUNG-TAE;JEONG JUN-HO |
分类号 |
H01L27/10;G11C13/00;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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