发明名称 AIRTIGHT TERMINAL FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an airtight terminal for a semiconductor device superior in radiation performance and airtightness. SOLUTION: A base 1 is made of copper, a copper alloy, or a cladding material including copper, and is composed of a member having a cuprous oxide film, a nickel coating, or a borax film formed thereon, as a sealing pre-processing. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008123813(A) 申请公布日期 2008.05.29
申请号 JP20060305766 申请日期 2006.11.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAMIMURA KEIICHI
分类号 H01R9/16;H01L23/12;H01L23/36;H01L33/64;H01R43/20 主分类号 H01R9/16
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