发明名称 Method for Producing Polishing Agent, Polishing Agent Produced Thereby and Method for Producing Silicon Wafer
摘要 The present invention is a method for producing a polishing agent in which silica particles are dispersed in an aqueous solution, comprising at least a step of removing metal compound ions from a prepared silica sol by ion exchange (B); a step of purifying further the ion-exchanged silica sol (D); a step of adding alkali metal hydroxide to the purified silica sol (F); and a step of adding an acid to the silica sol to which the alkali metal hydroxide is added (G). There is provided a method for producing a polishing agent which can extremely effectively suppress metal contamination when a silicon wafer or the like is polished can be produced.
申请公布号 US2008125016(A1) 申请公布日期 2008.05.29
申请号 US20050791837 申请日期 2005.11.25
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 NAKAMURA MIKIO;KIDA TAKAHIRO;TAKANO TOMOFUMI;IMAI TOSHIHIKO;OHSHIMA MASAAKI
分类号 B24B1/00;B24B37/00;B24B37/04;B24D3/00;C09K3/14;H01L21/304 主分类号 B24B1/00
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