发明名称 PHOTOLITHOGRAPHY UNIT AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE OR LIQUID CRYSTAL DEVICE BY USING IT
摘要 <P>PROBLEM TO BE SOLVED: To solve a matter that when a thermometer is fixed to a mirror, it may cause strain or transmission of vibration and the optical characteristics of a mirror adjusted with high precision may be deteriorated, and that cooling may be delayed because a temperature rise is detected by the thermometer stuck to the mirror before a Peltier element is driven to suppress the temperature rise. <P>SOLUTION: The photolithography unit comprises a mirror for reflecting the exposure light and a unit for controlling the temperature of the mirror. It further comprises a radiation temperature control plate provided oppositely to the mirror so that the temperature control unit delivers radiation heat to the mirror and receives radiation heat therefrom, an element performing temperature control of the radiation temperature control plate, and a temperature detector performing temperature control of the radiation temperature control plate. At least the temperature detecting portion of the temperature detector is bonded to at least a part of the radiation temperature control plate, and the joint of the temperature detecting portion and the radiation temperature control plate is arranged on the outside of the bonding face of the temperature control element at such a distance that the joint of the temperature control element and the radiation temperature control plate can be controlled in accordance with temperature variation in that joint. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008124079(A) 申请公布日期 2008.05.29
申请号 JP20060303186 申请日期 2006.11.08
申请人 NIKON CORP 发明人 SHIRAISHI MASAYUKI
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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