| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To precisely measure the nitrogen concentration in a silicon crystal by simple and quick infrared ray absorption difference spectrum, without requiring separate references for a manufacturing method of a silicon crystal, and to provide a manufacturing method of silicon wafer. <P>SOLUTION: After a silicon crystal containing nitrogen is produced by the Czochralski method, the silicon crystal is made to reach a quasi-thermal equilibrium state at first heating temperature and a first infrared ray absorption spectrum of the silicon crystal is measured. Then, the silicon crystal is made to reach a quasi-thermal equilibrium at second heating temperature, and a second infrared ray absorption spectrum of the silicon crystal is measured; the infrared ray absorption difference spectrum between the first infrared ray absorption spectrum and the second infrared ray absorption spectra is obtained; next, the intensity of an absorption peak corresponding to a defect caused by nitrogen is obtained; and nitrogen concentration in the silicon crystal is obtained, based on the obtained intensities of absorption peaks. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
