发明名称 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce variation in a capacitance value by reducing fringing capacitance while keeping reliability and high integration degree in MIM capacitance. SOLUTION: While maintaining area of bottom, the shape of an upper electrode 403 is formed in a way that the distance to a bottom electrode 405 becomes larger as it goes to upper portion. While the MIM capacitance value is maintained, and reliability and high integration degree in MIM capacitance are kept, the fringing capacitance can be reduced and the variation of the capacitance value can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008124405(A) 申请公布日期 2008.05.29
申请号 JP20060309753 申请日期 2006.11.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YUKI KOICHIRO;ONISHI TERUTO;HAYASHI SHINICHIRO
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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