| 摘要 |
PROBLEM TO BE SOLVED: To provide a treatment method and a treatment method of semiconductor device for assuring higher productivity without changing the conventional film forming condition and for controlling generation of particle. SOLUTION: In the treatment apparatus such as a batch type low-pressure vertical CVD apparatus or a batch type vertical epitaxial device, treatment capability can be improved with an increase in the number of wafers to be processed with a single treatment by placing on a board 101 a pair of wafers 109 that are in contact with each other at the rear surfaces thereof provided in the opposite side of the device surface as a set of wafers. Moreover, since the rear surface of the wafer 109 is not covered with an unwanted oxide film, generation of particle can be suppressed when the wafers are transferred while the rear surfaces are in contact state. COPYRIGHT: (C)2008,JPO&INPIT
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