APPARATUS FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

摘要

A Group III nitride compound semiconductor light-emitting device manufacturing apparatus with a simple structure, which it is capable of easily optimizing the density of a dopant element in the crystals of a Group III nitride compound semiconductor and forming layers with high efficiency using a sputtering method. The manufacturing apparatus includes: a chamber; a Ga target containing a Ga element and a dopant target containing a dopant element, the Ga target and the dopant target being placed within the chamber; and a power application unit that applies power to the Ga target and the dopant target simultaneously or alternately.