FINFET drive strength de-quantization using multiple orientation fins

摘要

A fin-type field effect transistor (FINFET) includes a plurality of fins forming drain-source regions and a gate region disposed about the fins. At least a first one of the fins has a first crystal orientation, and at least a second one of the fins has a second crystal orientation that is different from the first crystal orientation. The second crystal orientation is selected to be different from the first crystal orientation to reduce a drive strength quantization error of the transistor. Circuits using such FETS and methods for designing such circuits are also presented.