| 摘要 |
A method of writing into a nonvolatile semiconductor memory device including a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, includes the step of applying the voltage to the resistance memory element for switching from the high resistance state to the low resistance state, while a value of a current to flow in the resistance memory elements are limited to thereby memorize in the resistance memory elements the low resistance state of the low resistance value corresponding to the limited value of the current.
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