Feedthrough producing method, involves metallizing borehole wall of clearence hole, and maintaining electrical contact to metal layer, where surface coating is laid at semiconductor substrate

摘要

The method involves boring a clearance hole (3) in a semiconductor substrate (1) i.e. semiconductor wafer, and applying a surface covering (4) on two surfaces of the semiconductor substrate. A borehole wall of the clearance hole is metallized. An electrical contact to a metal layer (5) is maintained, where the surface coating is laid at the substrate. The surface coating is applied on a dielectric layer (6), where the surface coating includes the metal layer.