| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method and a display device, which is excellent in on-characteristics, off-characteristics, and reliability. <P>SOLUTION: The semiconductor device has such structure as a gate electrode, a gate insulating layer, and a semiconductor layer are stacked in this order on an insulating substrate, as well as a structure in which a source/drain is electrically connected to the semiconductor layer through a contact layer. The semiconductor layer has such structure as a low-crystallinity semiconductor layer in which an amorphous phase and crystal phase are present together and a high-crystallinity semiconductor layer having a higher crystallizing rate than the low-crystallinity semiconductor layer are sequentially stacked from the contact layer side. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
