| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the manufacturing method of semiconductor device, manufacturing method of electro-optic device, semiconductor device and electro-optic device semiconductor device, which are capable of improving a throughput upon introducing hydrogen ion into polycrystalline silicon film and capable of preventing the introduction of excessive impurity ion into the polycrystalline silicon film, further, capable of improving water resistance. <P>SOLUTION: Upon manufacturing the element substrate 10 of the electro-optic device, thin film transistors 80, 90 are formed, a first interlayer insulating film 4, consisting of silicon oxide film, and a second interlayer insulating film 7, consisting of silicon nitride film, are formed and then, hydrogen ion and phosphorus ion are introduced through ion shower doping method under this condition. The hydrogen ion has a small mass and, therefore, the same is introduced into deep part while the mass of phosphorus is large whereby the same is brought into the state of being doped in the second interlayer insulating film 7. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
