| 摘要 |
Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semiconductor wafer has a warp of less than 30 mum, a DeltaWarp of less than 30 mum, a bow of less than 10 mum and a DeltaBow of less than 10 mum. Processes for the production of a semiconductor wafer of this type require specific heat treatment regimens.
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