发明名称 STENCIL DESIGN AND METHOD FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY
摘要 A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.
申请公布号 WO2008064155(A2) 申请公布日期 2008.05.29
申请号 WO2007US85097 申请日期 2007.11.19
申请人 D2S, INC.;YOSHIDA, KENJI;MITSUHASHI, TAKASHI;MATSUSHITA, SHOHEI;FUJIMURA, AKIRA 发明人 YOSHIDA, KENJI;MITSUHASHI, TAKASHI;MATSUSHITA, SHOHEI;FUJIMURA, AKIRA
分类号 H01J37/30;G03B27/58;G03F1/16;G21K1/02;G21K5/04 主分类号 H01J37/30
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