| 摘要 |
PROBLEM TO BE SOLVED: To obtain improved dV/dt-VCL characteristics. SOLUTION: In a thyristor 1, a first conductivity type emitter layer 2, a second conductivity type base layer 3 opposite to the first conductivity type, a first conductivity type bulk layer 5, and a second conductivity type opposite base layer 6 are arranged in parallel successively, and a first conductivity type embedded layer 4 having concentration higher than that of the bulk layer is arranged between the base layer and the bulk layer. In the thyristor 1, when a surface in contact with the base layer and a surface in contact with the bulk layer are set to be first and second junction surfaces, respectively, in the embedded layer, the edge of the second junction surface is inclined toward the first junction surface for contacting, and the edge of the first junction surface has a prescribed inclination toward the edge of the second junction surface. COPYRIGHT: (C)2008,JPO&INPIT
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