| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor which simultaneously achieve a required specification on power and threshold voltages and a GI breakdown voltage required for a general TFT in manufacturing of a TFT with a DR of 1.5μm, and lower a power voltage, etc., without lowering a GI breakdown voltage in manufacturing of a TFT with a DR of 3.0μm, and to provide a liquid crystal display device having a fine low power consumption property. <P>SOLUTION: The semiconductor device includes an insulating substrate, a base coat film formed on the insulating substrate, a semiconductor layer which is formed on the base coat film and has a flat surface, a gate insulating film of a double-layer structure composed of a silicon oxide film formed on the flat surface of the semiconductor layer and a silicon nitride film formed on the silicon oxide film, and a gate electrode formed on the gate insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
