| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor substrate inhibiting the deterioration of the electrical characteristics of a semiconductor layer resulting from a substrate floating effect and displaying excellent electrical characteristics, to provide a semiconductor substrate, to provide a semiconductor device, to provide an electrooptic device, and to provide electronic equipment. <P>SOLUTION: A non-single-crystal semiconductor layer 210 is formed on one surface side of a single-crystal semiconductor substrate 200, and an insulating layer 211 is formed on the top face of the non-single-crystal semiconductor layer 210. Ions are implanted into the single-crystal semiconductor substrate 200 from the insulating layer 211 side to form an ion implanting layer 205. After the ions are implanted, a supporting substrate 500 is laminated on the insulating layer 211 side of the single-crystal semiconductor substrate 200. A surface layer section reverse to the non-single-crystal semiconductor layer 210 in the single-crystal semiconductor substrate 200 is separated by the ion implanting layer 205, and a single-crystal semiconductor layer 220 is formed on the supporting substrate 500. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
