发明名称 Bottom electrode geometry for phase change memory
摘要 A PCRAM cell has a gradated or layered resistivity bottom electrode with higher resistivity closer to a phase change material, to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements. The bottom electrode can also be tapered to have a smaller cross-sectional area at the top of the bottom electrode than at the bottom of the bottom electrode.
申请公布号 US2008121862(A1) 申请公布日期 2008.05.29
申请号 US20060512858 申请日期 2006.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU JUN
分类号 H01L47/00;H01L21/06 主分类号 H01L47/00
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