| 摘要 |
The embodiment relates to a fabricating method of a semiconductor device, the method comprising the steps of: forming a gate oxide film, a gate electrode, and a side spacer on a semiconductor substrate; forming a source/drain area by implanting ion on the semiconductor substrate; forming a carbon layer on the nickel silicide surface by performing a primary thermal processing process on the nickel silicide film; and removing the carbon layer by performing a secondary thermal processing process on the nickel silicide film under an ambient gas.
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